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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1269 APPLICATIONS For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB944 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Collector current-peak SEM GE Open base OND IC TOR UC VALUE -130 -80 -7 -4 -8 UNIT V V V A A Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 35 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VEB=-5V; IC=0 VCB=-100V; IE=0 IC=-0.1A ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A; VCE=-10V;f=10MHz 45 90 30 MIN -80 TYP. 2SB944 SYMBOL V(BR)CEO VCEsat VBEsat IEBO ICBO hFE-1 hFE-2 fT MAX UNIT V -0.5 -1.5 -50 -10 |I |I V V A A 260 MHz Switching times ton tstg tf Turn-on time ANG CH P 130-260 Storage time Fall time hFE-2 Classifications Q 90-180 IN EMIC ES IC=-1A;IB1=-IB2=-0.1A OND TOR UC 0.15 0.8 0.15 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB944 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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